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VERTICAL MULTILAYER STRUCTURES BASED ON POROUS SILICON LAYERS FOR MID-INFRARED APPLICATIONS
1 : Institut des Fonctions Optiques pour les Technologies de línformatiON
Universite de Rennes 1
ENSSAT 6, rue de Kerampont CS 80518 22305 LANNION Cedex -
France
2 : Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Université de Lille
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D'ASCQ CEDEX -
France
This presentation demonstrates the fabrication of vertical porous silicon (PSi) multilayer structures on Si substrates and their sensing potential in the Mid-IR wavelength range notably near the cut-off band of Si due to its absorption up to 8 µm. Bragg reflector and vertical cavity on P+ silicon substrates for applications in spectroscopic sensing in the Mid-IR wavelength range are fabricated and optically characterized.
