VERTICAL MULTILAYER STRUCTURES BASED ON POROUS SILICON LAYERS FOR MID-INFRARED APPLICATIONS
Sofiane Meziani  1@  , Maxime Duris  1@  , Mohammed Guendouz  1@  , Nathalie Lorrain  1@  , Loïc Bodiou  1@  , Parastesh Pirasteh  1@  , Warda Raiah  1, 2@  , Yannick Coffinier  2@  , Vincent Thomy  2@  , Joël Charrier  1@  
1 : Institut des Fonctions Optiques pour les Technologies de línformatiON
Universite de Rennes 1
ENSSAT 6, rue de Kerampont CS 80518 22305 LANNION Cedex -  France
2 : Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Université de Lille
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D'ASCQ CEDEX -  France

This presentation demonstrates the fabrication of vertical porous silicon (PSi) multilayer structures on Si substrates and their sensing potential in the Mid-IR wavelength range notably near the cut-off band of Si due to its absorption up to 8 µm. Bragg reflector and vertical cavity on P+ silicon substrates for applications in spectroscopic sensing in the Mid-IR wavelength range are fabricated and optically characterized.


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